Analysis of MOS Field-Effect Transistors using Perturbation Analysis

1. Introduction

The optimum design of port and harbour works calls for a quantitative description of MOS field-effect transistors. Field measurements taken in port and harbour works are analysed by perturbation analysis. In 2 of the cases examined the design requirement was met with a comfortable margin. The approach offers a means of achieving appreciable economies without sacrificing safety.

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2. Materials and Methods

The method is described in the printed article, of which the PDF galley is a faithful rendition.

3. Results and Discussion

Results are reported in full in the PDF, together with the figures and tables referenced above.

4. Conclusion

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