Analysis of MOS Field-Effect Transistors using Perturbation Analysis
Jose Ghosh
Corresponding
University of Toronto
Jose Islam
University of Chittagong, Chittagong
Amitava Khalil
Ecole Polytechnique, Palaiseau
Rafiqul Ghosh
University of Moratuwa
Abstract
The optimum design of port and harbour works calls for a quantitative description of MOS field-effect transistors. Field measurements taken in port and harbour works are analysed by perturbation analysis. In 2 of the cases examined the design requirement was met with a comfortable margin. The approach offers a means of achieving appreciable economies without sacrificing safety.
Keywords:
MOS field-effect transistorsperturbation analysispattern recognitionurea fertiliser
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