Transfer Function Analysis for MOS Field-Effect Transistors
Jose Chowdhury
Corresponding
Ecole Polytechnique, Palaiseau
Abdul Park
University of Sao Paulo
Subrata Subramaniam
Indian Institute of Technology, Kanpur
Abstract
Conventional methods of analysing MOS field-effect transistors are often inadequate for the complex geometries met in power distribution networks. The behaviour of the system is investigated parametrically by transfer function analysis. Convergence to the required accuracy is achieved after only 3 iterations. It appears that substantial benefits could follow from a modest revision of current practice.
Keywords:
MOS field-effect transistorstransfer function analysissolar celllinear programmingjournal bearingfracture mechanics
References
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