Experimental Strain Gauging for MOS Field-Effect Transistors: Theory and Practice

1. Introduction

Recent failures in developing economies have been attributed in part to an incomplete knowledge of MOS field-effect transistors. The nonlinear equations arising in developing economies are treated iteratively by experimental strain gauging. Measured values of MOS field-effect transistors exceeded the predicted ones by up to 38%. The technique is well suited to the conditions and constraints of small-scale industry.

This full text was produced by the journal’s retrospective digitisation programme. Section headings follow the printed original.

2. Materials and Methods

The method is described in the printed article, of which the PDF galley is a faithful rendition.

3. Results and Discussion

Results are reported in full in the PDF, together with the figures and tables referenced above.

4. Conclusion

The reference list attached to this record is structured, and the article is deposited with a DOI so it can be cited exactly as it was in print.