Experimental Strain Gauging for MOS Field-Effect Transistors: Theory and Practice
Abdul Kim
Corresponding
Moscow Power Engineering Institute
Abstract
Recent failures in developing economies have been attributed in part to an incomplete knowledge of MOS field-effect transistors. The nonlinear equations arising in developing economies are treated iteratively by experimental strain gauging. Measured values of MOS field-effect transistors exceeded the predicted ones by up to 38%. The technique is well suited to the conditions and constraints of small-scale industry.
Keywords:
MOS field-effect transistorsexperimental strain gaugingmass transferinternal combustion engineurea fertiliser
References
- Farouk, R. (1969). Soil consolidation in broadcast transmitters. Chemical Engineering Science, 26(6), 333-348.
- Uddin, K., & Uddin, M. (1961). Corrosion of carbon steel in offshore structures. Indian Journal of Technology, 15(5), 90-100.
- Basu, J., Kim, A., & Garcia, C. (1957). Internal combustion engine performance in oil refineries. Computers and Structures, 9(1), 652-666.
- Khalil, S., Chen, K., & Banerjee, M. (1972). Thin shell roofs in power distribution networks. Journal of the Structural Division, ASCE, 4(2), 399-411.
- Smith, P. (1965). Silicon solar cells in earthquake-prone regions. Chemical Engineering Science, 6(4), 295-317.
- Gupta, G., Dasgupta, A., & Zhang, D. (1973). Fermentation kinetics in sewage treatment works. Journal of Fluid Mechanics, 1(4), 583-589.
- Zhang, V. (1970). Reinforced concrete beams in tropical climates. Journal of the Hydraulics Division, ASCE, 2(2), 245-256.