Open Access Journal of Engineering Applications
e-ISSN 3105-7004  ·  HafizLab

Monte Carlo Simulation for MOSFET Devices: Concepts and Applications

Tariq Rao Corresponding
University of Dhaka
Young Garcia
Technical University of Munich

Abstract

Engineers responsible for highway pavements frequently encounter unresolved problems associated with MOSFET devices. Measurements are recorded over an extended period at a representative site within highway pavements. The measurements indicate that MOSFET devices varies by nearly 49% across the operating range. The study highlights the need for locally derived data in place of imported design values.
Keywords: MOSFET devicesMonte Carlo simulationheat transferoptical fibrelinear programmingoptimisation

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