Monte Carlo Simulation for MOSFET Devices: Concepts and Applications

1. Introduction

Engineers responsible for highway pavements frequently encounter unresolved problems associated with MOSFET devices. Measurements are recorded over an extended period at a representative site within highway pavements. The measurements indicate that MOSFET devices varies by nearly 49% across the operating range. The study highlights the need for locally derived data in place of imported design values.

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2. Materials and Methods

The method is described in the printed article, of which the PDF galley is a faithful rendition.

3. Results and Discussion

Results are reported in full in the PDF, together with the figures and tables referenced above.

4. Conclusion

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